1.5 0. 1 4.5 0. 1 2.6 0. 15 2.1 0. 2 1.3 0.2 0.20 3m ax 0.2 0.05 5.1 0.2 features for surface mounted applications low leakage low forward voltage drop high current capability mechanical data case: jedec do-214ac,molded plastic terminals: solder plated, solderable per mil- std-202,method 208 polarity: color band denotes cathode end weight: 0.002 ounces, 0.064 grams mounting position: any maximum ratings and electrical characteristics ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. m3 m4 m5 m6 m7 units maximum recurrent peak reverse voltage v rrm 200 400 600 800 1000 v maximum rms voltage v rms 140 280 420 560 700 v maximum dc blocking voltage v dc 200 400 600 800 1000 v maximum average forward rectified current @t l =110 i (av) a peak forward surge current 8.3ms single half-sine-wave superimposed on rated load t j =125 maximum instantaneous forward voltage at 1.0 a v f v maximum reverse current @t a =25 at rated dc blocking voltage @t a =100 i r a typical junction capacitance (note1) c j pf typical thermal resistance (note2) r ja /w operating temperature range t j storage temperature range t stg 2. thermal resistance from junction to ambient 35 70 surface mount rectifiers easily cleaned with alcohol,isopropnol and similar solvents the plastic material carries u/l recognition 94v-0 dimensions in millimeters 50 100 1.0 1.1 m1 m2 do-214ac(sma) note: 1. measured at 1.0mhz and applied reverse voltage of 4.0v dc. i fsm a 30 - 55 --- + 150 - 55 --- + 150 15 5.0 50 75 50 100 m1---m7 page: p2 - p1 parameter mako semiconductor co.,limited m a k o s e m i c o n d u c t o r c o . , l i m i t e d h t t p : / / w w w . m a k o s e m i . h k /
1 10 100 0. 0 1 0. 1 10 1 100 t j =25 c f= 1 .0mhz vsig=50mvp-p 0 puise w i dth=300 s 1%duty cy cle 0.4 0. 01 0. 1 1 10 0.6 0.8 1.0. 1.2 1.4 1.6 1.8 2.0 100 t j =25 c o t j =12 5 c o t j =75 c o t j =25 c o 100 0. 1 0. 01 0.001 1 10 80 0 20 40 60 100 average forward current,amperes peak forward surge current,amperes instantaneous forward current,amperes instantaneous reverse current microamperes junction capacitance pf transient thermal impedance, /w nu mber of cycles at 60hz instantaneous forward voltage,volts percent of rated peak reverse voltage, fi g. 6-transi ent thermal i mpedance re ver se voltage,volts pulse duraton,sec ambient temperature f i g. 3 -- typi cal forward characteri sti cs fi g. 4 -- typi cal reverse characteri sti cs fi g. 5-typi cal juncti on capaci tance fi g. 1 -- forward derati ng curve fi g. 2 peak forward surge current 1.0 0.8 0.6 0. 4 0.2 0 0 resi stive or inductive load 0.2x 0.2(5.0x5.0mm) thick copperpand areas 1.2 20 40 60 80 100 120 140 160 1 1 10 100 10 100 t l =110 c 8 .3ms single half sine wave (jedec method) o 30 0.1 0. 1 1 10 100 10 1 0.01 100 units m ounted on 0.20x0.20''(5.0x5.0mm)x0.5mil inches(0.013mm) thick copperland areas m1---m7 page: p2 - p2 mako semiconductor co.,limited m a k o s e m i c o n d u c t o r c o . , l i m i t e d h t t p : / / w w w . m a k o s e m i . h k /
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